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Product code: #ALL-005769

MZ-V9V1T0BW, SAMSUNG, M2 SSD, 990 NVMe 1TB PCIe® 4.0, R, 150MB/s, W 6,450MB/s

Samsung

MZ-V9V1T0BW, SAMSUNG, M2 SSD, 990 NVMe 1TB PCIe® 4.0, R, 150MB/s, W 6,450MB/s

  • InterfaceNVMe PCIe 4.0
  • Form FactorM.2 2280
  • Sequential Read7150 MB/s
630 ₾

VAT included

  • In stock
630 ₾

VAT included

  • In stock
Quantity
1

1 in stock

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Description

The Samsung MZ-V9V1T0BW is an M.2 solid-state drive with 1 TB of capacity. It connects through the NVMe PCIe 4.0 interface and uses the M.2 2280 form factor.

The drive reads sequentially at 7150 MB/s and writes sequentially at 6450 MB/s. It is rated for 700K IOPS in random reads and 1,100K IOPS in random writes.

Key features:

  • Capacity: 1 TB
  • Interface: NVMe PCIe 4.0
  • Form factor: M.2 2280
  • Sequential read: 7150 MB/s
  • Sequential write: 6450 MB/s
  • Random read: 700K IOPS, random write: 1,100K IOPS
  • Endurance: 400 TBW, MTBF of 1 500 000 hours

Specifications 9

Open the spec sheet PDF(opens in a new tab)

Capacity

Capacity
1 TB

Interface & Form Factor

Interface
NVMe PCIe 4.0
Form Factor
M.2 2280

Drive Performance

Sequential Read
7150 MB/s
Sequential Write
6450 MB/s
Random Read IOPS
700K IOPS
Random Write IOPS
1,100K IOPS

Endurance

TBW
400 TB
MTBF
1 500 000 h

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